KOBUS, based on FAST reactor, proposes the largest process window in one reactor for research and development: ALD, FAST and CVD methods.
It allows to extend film deposition capability from very thin & highly conformal to thick & conformal solution.
- High-k gate dielectrics
- Metal gate electrodes
- 3D integration: TSV barrier/seed or seedless barrier deposition
- New non-volatile memory concepts (PCRAM, ReRAM, FeRAM)
- Capacitor (MIM, DRAM, eDRAM) coupling dielectrics
- Capacitor (MIM, DRAM, eDRAM) electrodes
- Thin-film batteries
Contact us for further details concerning the capabilities of this unique technique.